Morphology of Thin Aluminum Film Grown by DC Magnetron Sputtering onto SiO2 on Si(100) Substrate
نویسنده
چکیده
The morphology and grown mechanism of aluminum films from 3nm to 30nm in thickness onto thermal SiO2 on Si(100) substrates have been studied by atomic force microscopy and TCR measurement. The thin films prepared by dc magnetron sputtering at 450°C is composed of islands of aluminum. The island density, distribution of island size, height, and shape are studied.
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